maximum ratings symbol value unit collector-emitter voltage v ceo 50 v collector-base voltage v cbo 60 v emitter-base voltage v ebo 7v collector current-continuoun i c 150 madc thermal charateeristics symbol max unit total device dissipation fr-5 board, (1) p d 225 mw 1.8 mw/ o c thermal resistance, junction to ambient r q ja 556 o c / w p d 300 m w 2.4 mw/ o c thermal resistance, junction to ambient r q ja 417 o c / w junction and storage temperature tj ,tstg -55 to +150 o c device marking l 2sc1623qlt1g=l5 l 2sc1623rlt1g=l6 l 2sc1623slt1g=l7 electrical characteristics (t a =25 o c unless otherwise noted) symbol min typ max unit off characteristics collector cutoff current (v cb =60v) i cbo - - 0.1 m a emitter cutoff current (v be =5v) i ebo 0.1 m a characteristic total device dissipation derate above 25 o c rating t a =25 o c derate above 25 o c alumina substrate, (2) ta=25 o c characteristic 1 3 2 sot? 23 general purpose transistors 2 emitter 3 collector 1 base pb-free pack k age is available device marking and ordering information device marking L2SC1623QLT3G l5 l2sc1623rlt3g l6 l2sc1623slt3g l7 3000/tape&reel 10000/tape&reel 10000/tape&reel shipping 3000/tape&reel 10000/tape&reel 3000/tape&reel l2sc1623qlt1g l5 l2sc1623rlt1g l6 l2sc1623slt1g l7 l2sc1623qlt1g series product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
on characteristics dc current gain (i c =1.0ma, v ce =6v) h fe 1 2 0 - 560 collector-emitter saturation voltage (i c =100ma,i b =10ma) v ce(sat) - 0.15 0.3 v base-emitter saturation voltage (i c =100ma,i b =10ma) v be(sat) - 0.86 1.0 v i c =1ma,v ce =6.0v) v be 0.55 0.62 0.65 v small-signal characteristics h fe value s are classified as fo ll owes current-gain-bandwidth product f t - 250 - mh z (v ce = 6.0 v, i e = - 1 0ma ) output capacitance(v ce = 6v, i e =0, f=1.0mhz) c ob - 3 - p f note : * q r s h fe 120~270 180~390 270~560 base -emitter on voltage 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com l2sc1623qlt1g series product specification
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